All MOSFET. NCEP039N10D Datasheet

 

NCEP039N10D Datasheet and Replacement


   Type Designator: NCEP039N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 135 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 803 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO263
 

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NCEP039N10D Datasheet (PDF)

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NCEP039N10D

NCEP039N10, NCEP039N10DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , typical (TO-263)@ V

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NCEP039N10D

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO

 4.1. Size:1515K  ncepower
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NCEP039N10D

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

 4.2. Size:314K  ncepower
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NCEP039N10D

NCEP039N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati

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Datasheet: NCEP02580F , NCEP028N85 , NCEP028N85D , NCEP02T10D , NCEP033N85 , NCEP033N85D , NCEP035N85GU , NCEP039N10 , 12N60 , NCEP039N10M , NCEP039N10MD , NCEP040N10 , NCEP040N10D , NCEP040N85 , NCEP040N85D , NCEP045N10 , NCEP045N10D .

History: MTD120C10KJ4

Keywords - NCEP039N10D MOSFET datasheet

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