Справочник MOSFET. NCEP039N10MD

 

NCEP039N10MD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP039N10MD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 135 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 11.5 ns
   Cossⓘ - Выходная емкость: 618 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

NCEP039N10MD Datasheet (PDF)

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 ncep039n10md.pdf pdf_icon

NCEP039N10MD

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

 ..2. Size:338K  ncepower
 ncep039n10m ncep039n10md.pdf pdf_icon

NCEP039N10MD

NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (

 3.1. Size:1515K  ncepower
 ncep039n10m.pdf pdf_icon

NCEP039N10MD

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

 4.1. Size:1810K  ncepower
 ncep039n10d.pdf pdf_icon

NCEP039N10MD

NCEP039N10, NCEP039N10DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , typical (TO-263)@ V

ПОКАЗАТЬ ЕЩЁ

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History: CS5210 | WMJ38N60C2 | BLF7G24L-140 | UF830G-TN3-R | AO6804A | FIR6N40FG | IRFR410

 

 
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