NCEP039N10MD - Даташиты. Аналоги. Основные параметры

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

NCEP039N10, NCEP039N10DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , typical (TO-263)@ V

NCEP039N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati

NCEP039N10, NCEP039N10DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , typical (TO-263)@ V

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO