NCEP039N10MD PDF and Equivalents Search

 

NCEP039N10MD Specs and Replacement

Type Designator: NCEP039N10MD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 135 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.5 nS

Cossⓘ - Output Capacitance: 618 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: TO263

NCEP039N10MD substitution

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NCEP039N10MD datasheet

 ..1. Size:1515K  ncepower
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NCEP039N10MD

Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t... See More ⇒

 ..2. Size:338K  ncepower
 ncep039n10m ncep039n10md.pdf pdf_icon

NCEP039N10MD

NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (... See More ⇒

 3.1. Size:1515K  ncepower
 ncep039n10m.pdf pdf_icon

NCEP039N10MD

Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t... See More ⇒

 4.1. Size:1810K  ncepower
 ncep039n10d.pdf pdf_icon

NCEP039N10MD

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , typical (TO-263)@ V ... See More ⇒

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Detailed specifications: NCEP028N85D, NCEP02T10D, NCEP033N85, NCEP033N85D, NCEP035N85GU, NCEP039N10, NCEP039N10D, NCEP039N10M, IRF9540N, NCEP040N10, NCEP040N10D, NCEP040N85, NCEP040N85D, NCEP045N10, NCEP045N10D, NCEP050N85, NCEP050N85D

Keywords - NCEP039N10MD MOSFET specs

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