Справочник MOSFET. NCEP040N10D

 

NCEP040N10D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP040N10D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 210 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 560 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для NCEP040N10D

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP040N10D Datasheet (PDF)

 ..1. Size:363K  ncepower
 ncep040n10d.pdf pdf_icon

NCEP040N10D

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 ..2. Size:363K  ncepower
 ncep040n10 ncep040n10d.pdf pdf_icon

NCEP040N10D

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 4.1. Size:363K  ncepower
 ncep040n10.pdf pdf_icon

NCEP040N10D

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 4.2. Size:363K  ncepower
 ncep040n10m.pdf pdf_icon

NCEP040N10D

NCEP040N10M,NCEP040N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP033N85 , NCEP033N85D , NCEP035N85GU , NCEP039N10 , NCEP039N10D , NCEP039N10M , NCEP039N10MD , NCEP040N10 , 5N60 , NCEP040N85 , NCEP040N85D , NCEP045N10 , NCEP045N10D , NCEP050N85 , NCEP050N85D , NCEP055N85 , NCEP055N85D .

History: IRFR220 | IRFBC20PBF

 

 
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