NCEP040N10D PDF and Equivalents Search

 

NCEP040N10D Specs and Replacement

Type Designator: NCEP040N10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

NCEP040N10D substitution

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NCEP040N10D datasheet

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NCEP040N10D

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

 ..2. Size:363K  ncepower
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NCEP040N10D

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

 4.1. Size:363K  ncepower
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NCEP040N10D

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

 4.2. Size:363K  ncepower
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NCEP040N10D

NCEP040N10M,NCEP040N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG... See More ⇒

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Detailed specifications: NCEP033N85, NCEP033N85D, NCEP035N85GU, NCEP039N10, NCEP039N10D, NCEP039N10M, NCEP039N10MD, NCEP040N10, IRLB4132, NCEP040N85, NCEP040N85D, NCEP045N10, NCEP045N10D, NCEP050N85, NCEP050N85D, NCEP055N85, NCEP055N85D

Keywords - NCEP040N10D MOSFET specs

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