Справочник MOSFET. NCEP040N10

 

NCEP040N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP040N10
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 210 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 560 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO220

 Аналог (замена) для NCEP040N10

 

 

NCEP040N10 Datasheet (PDF)

 ..1. Size:363K  ncepower
 ncep040n10.pdf

NCEP040N10 NCEP040N10

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 ..2. Size:363K  ncepower
 ncep040n10 ncep040n10d.pdf

NCEP040N10 NCEP040N10

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 0.1. Size:363K  ncepower
 ncep040n10d.pdf

NCEP040N10 NCEP040N10

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 0.2. Size:363K  ncepower
 ncep040n10m.pdf

NCEP040N10 NCEP040N10

NCEP040N10M,NCEP040N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG

 0.3. Size:985K  ncepower
 ncep040n10gu.pdf

NCEP040N10 NCEP040N10

http://www.ncepower.com NCEP040N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N10GU uses Super Trench II technology that is V =100V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =3.6m (Typ.) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

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