All MOSFET. NCEP040N10 Datasheet

 

NCEP040N10 Datasheet and Replacement


   Type Designator: NCEP040N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220
 

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NCEP040N10 Datasheet (PDF)

 ..1. Size:363K  ncepower
 ncep040n10.pdf pdf_icon

NCEP040N10

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 ..2. Size:363K  ncepower
 ncep040n10 ncep040n10d.pdf pdf_icon

NCEP040N10

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 0.1. Size:363K  ncepower
 ncep040n10d.pdf pdf_icon

NCEP040N10

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 0.2. Size:363K  ncepower
 ncep040n10m.pdf pdf_icon

NCEP040N10

NCEP040N10M,NCEP040N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG

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Datasheet: NCEP02T10D , NCEP033N85 , NCEP033N85D , NCEP035N85GU , NCEP039N10 , NCEP039N10D , NCEP039N10M , NCEP039N10MD , IRF4905 , NCEP040N10D , NCEP040N85 , NCEP040N85D , NCEP045N10 , NCEP045N10D , NCEP050N85 , NCEP050N85D , NCEP055N85 .

History: IRF530N | IRF452 | SMC3407

Keywords - NCEP040N10 MOSFET datasheet

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 NCEP040N10 equivalent finder
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