NCEP035N85GU - описание и поиск аналогов

 

NCEP035N85GU. Аналоги и основные параметры

Наименование производителя: NCEP035N85GU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 160 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 135 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 11 ns

Cossⓘ - Выходная емкость: 850 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP035N85GU

- подборⓘ MOSFET транзистора по параметрам

 

NCEP035N85GU даташит

 ..1. Size:326K  ncepower
 ncep035n85gu.pdf pdf_icon

NCEP035N85GU

http //www.ncepower.com NCEP035N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel

 4.1. Size:414K  ncepower
 ncep035n85 ncep035n85d.pdf pdf_icon

NCEP035N85GU

NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 4.2. Size:414K  ncepower
 ncep035n85d.pdf pdf_icon

NCEP035N85GU

NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 4.3. Size:414K  ncepower
 ncep035n85.pdf pdf_icon

NCEP035N85GU

NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP02525F , NCEP02580 , NCEP02580F , NCEP028N85 , NCEP028N85D , NCEP02T10D , NCEP033N85 , NCEP033N85D , AON7408 , NCEP039N10 , NCEP039N10D , NCEP039N10M , NCEP039N10MD , NCEP040N10 , NCEP040N10D , NCEP040N85 , NCEP040N85D .

History: AGMH606H

 

 

 

 

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