Справочник MOSFET. NCEP035N85GU

 

NCEP035N85GU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP035N85GU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 135 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 850 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: DFN5X6-8L
     - подбор MOSFET транзистора по параметрам

 

NCEP035N85GU Datasheet (PDF)

 ..1. Size:326K  ncepower
 ncep035n85gu.pdf pdf_icon

NCEP035N85GU

http://www.ncepower.com NCEP035N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel

 4.1. Size:414K  ncepower
 ncep035n85 ncep035n85d.pdf pdf_icon

NCEP035N85GU

NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 4.2. Size:414K  ncepower
 ncep035n85d.pdf pdf_icon

NCEP035N85GU

NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 4.3. Size:414K  ncepower
 ncep035n85.pdf pdf_icon

NCEP035N85GU

NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APL602J | TK3A60DA | BSS214NW

 

 
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