NCEP035N85GU MOSFET. Datasheet pdf. Equivalent

   Type Designator: NCEP035N85GU
   Marking Code: P035N85GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 135 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN5X6-8L

NCEP035N85GU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NCEP035N85GU Datasheet (PDF)

..1. Size:326K ncepower
ncep035n85gu.pdf

http://www.ncepower.com NCEP035N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel

4.1. Size:414K ncepower
ncep035n85 ncep035n85d.pdf

NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

4.2. Size:414K ncepower
ncep035n85d.pdf