All MOSFET. NCEP035N85GU Datasheet

 

NCEP035N85GU Datasheet and Replacement


   Type Designator: NCEP035N85GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 135 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN5X6-8L
 

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NCEP035N85GU Datasheet (PDF)

 ..1. Size:326K  ncepower
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NCEP035N85GU

http://www.ncepower.com NCEP035N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel

 4.1. Size:414K  ncepower
 ncep035n85 ncep035n85d.pdf pdf_icon

NCEP035N85GU

NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 4.2. Size:414K  ncepower
 ncep035n85d.pdf pdf_icon

NCEP035N85GU

NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 4.3. Size:414K  ncepower
 ncep035n85.pdf pdf_icon

NCEP035N85GU

NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

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Datasheet: NCEP02525F , NCEP02580 , NCEP02580F , NCEP028N85 , NCEP028N85D , NCEP02T10D , NCEP033N85 , NCEP033N85D , IRLZ44N , NCEP039N10 , NCEP039N10D , NCEP039N10M , NCEP039N10MD , NCEP040N10 , NCEP040N10D , NCEP040N85 , NCEP040N85D .

History: STP24NM65N | SFB087N120C2 | CTD03N4P3

Keywords - NCEP035N85GU MOSFET datasheet

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