FDD20AN06A0F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD20AN06A0F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 19 nC
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO252DPAK
FDD20AN06A0F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD20AN06A0F085 Datasheet (PDF)
3.1. fdd20an06a0.pdf 
Size:605K _fairchild_semi
June 2003FDD20AN06A0N-Channel PowerTrench MOSFET60V, 45A, 20mFeatures Applications rDS(ON) = 17m (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conver
5.1. fdd20an06 f085.pdf Size:319K _fairchild_semi
May 2010FDD20AN06A0 F085_N-Channel PowerTrench MOSFET60V, 45A, 20mFeatures Applications rDS(ON) = 17m (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC
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