NCEP068N10AK Specs and Replacement
Type Designator: NCEP068N10AK
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 316 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO252
NCEP068N10AK substitution
- MOSFET ⓘ Cross-Reference Search
NCEP068N10AK datasheet
ncep068n10ak.pdf
http //www.ncepower.com NCEP068N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo... See More ⇒
ncep068n10ag.pdf
http //www.ncepower.com NCEP068N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo... See More ⇒
ncep068n10k.pdf
http //www.ncepower.com NCEP068N10K NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)... See More ⇒
ncep068n10g.pdf
http //www.ncepower.com NCEP068N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)... See More ⇒
Detailed specifications: NCEP050N85, NCEP050N85D, NCEP055N85, NCEP055N85D, NCEP058N85, NCEP058N85D, NCEP065N85, NCEP068N10AG, IRFB3607, NCEP068N10G, NCEP072N10, NCEP12T12, NCEP12T12D, NCEP1520, NCEP1545G, NCEP1545K, NCEP1570
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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