Справочник MOSFET. NCEP068N10AK

 

NCEP068N10AK Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP068N10AK
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 316 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0068 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для NCEP068N10AK

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP068N10AK Datasheet (PDF)

 ..1. Size:366K  ncepower
ncep068n10ak.pdfpdf_icon

NCEP068N10AK

http://www.ncepower.com NCEP068N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo

 3.1. Size:333K  ncepower
ncep068n10ag.pdfpdf_icon

NCEP068N10AK

http://www.ncepower.com NCEP068N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo

 4.1. Size:308K  ncepower
ncep068n10k.pdfpdf_icon

NCEP068N10AK

http://www.ncepower.com NCEP068N10KNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

 4.2. Size:329K  ncepower
ncep068n10g.pdfpdf_icon

NCEP068N10AK

http://www.ncepower.com NCEP068N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

Другие MOSFET... NCEP050N85 , NCEP050N85D , NCEP055N85 , NCEP055N85D , NCEP058N85 , NCEP058N85D , NCEP065N85 , NCEP068N10AG , AON7506 , NCEP068N10G , NCEP072N10 , NCEP12T12 , NCEP12T12D , NCEP1520 , NCEP1545G , NCEP1545K , NCEP1570 .

History: IRLZ44ZL | SSPL1010 | WSF3087 | SSD02N65 | AO4472 | SMG2302 | SSM9916GH

 

 
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