All MOSFET. NCEP12T12 Datasheet

 

NCEP12T12 Datasheet and Replacement


   Type Designator: NCEP12T12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 185 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 129 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 641 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO220
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NCEP12T12 Datasheet (PDF)

 ..1. Size:343K  ncepower
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NCEP12T12

Pb Free Producthttp://www.ncepower.com NCEP12T12NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.1. Size:339K  ncepower
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NCEP12T12

Pb Free Producthttp://www.ncepower.com NCEP12T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.1. Size:309K  ncepower
 ncep12t11.pdf pdf_icon

NCEP12T12

http://www.ncepower.com NCEP12T11NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 6.2. Size:348K  ncepower
 ncep12t15.pdf pdf_icon

NCEP12T12

http://www.ncepower.com NCEP12T15NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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History: LSF65R570GT | CSD16342Q5A

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