Справочник MOSFET. NCEP12T12

 

NCEP12T12 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP12T12
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 185 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 129 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 67 ns
   Cossⓘ - Выходная емкость: 641 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

NCEP12T12 Datasheet (PDF)

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NCEP12T12

Pb Free Producthttp://www.ncepower.com NCEP12T12NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.1. Size:339K  ncepower
 ncep12t12d.pdf pdf_icon

NCEP12T12

Pb Free Producthttp://www.ncepower.com NCEP12T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.1. Size:309K  ncepower
 ncep12t11.pdf pdf_icon

NCEP12T12

http://www.ncepower.com NCEP12T11NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 6.2. Size:348K  ncepower
 ncep12t15.pdf pdf_icon

NCEP12T12

http://www.ncepower.com NCEP12T15NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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History: NCEP40T35AVD

 

 
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