All MOSFET. FDD2582 Datasheet

 

FDD2582 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD2582

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 95 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 19 nC

Maximum Drain-Source On-State Resistance (Rds): 0.066 Ohm

Package: TO252 DPAK

FDD2582 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD2582 Datasheet (PDF)

0.1. fdd2582.pdf Size:268K _fairchild_semi

FDD2582
FDD2582

September 2002FDD2582N-Channel PowerTrench MOSFET150V, 21A, 66mFeatures Applications rDS(ON) = 58m (Typ.), VGS = 10V, ID = 7A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifi

9.1. fdd2570.pdf Size:97K _fairchild_semi

FDD2582
FDD2582

February 2001FDD2570150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 90 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOS

9.2. fdd2572 f085.pdf Size:572K _fairchild_semi

FDD2582
FDD2582

SNovember 2008FDD2572_F085N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous

 9.3. fdd2512.pdf Size:84K _fairchild_semi

FDD2582
FDD2582

August 2001FDD2512150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.7 A, 150 V RDS(ON) = 420 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 470 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. These MOSFETs feature Low g

9.4. fdd2572 fdu2572.pdf Size:247K _fairchild_semi

FDD2582
FDD2582

September 2002FDD2572 / FDU2572N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

Datasheet: FDD16AN08A0 , FDD16AN08A0_F085 , FDD18N20LZ , STU102S , FDD20AN06A0_F085 , FDD24AN06LA0_F085 , FDD2572 , FDD2572_F085 , IRF1010E , FDD2670 , STU09N25 , FDD26AN06A0_F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 .

 

 
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