All MOSFET. FDD2582 Datasheet

 

FDD2582 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD2582

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 95 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 19 nC

Maximum Drain-Source On-State Resistance (Rds): 0.066 Ohm

Package: TO252, DPAK

FDD2582 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD2582 Datasheet (PDF)

0.1. fdd2582.pdf Size:268K _fairchild_semi

FDD2582
FDD2582

September 2002 FDD2582 N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ Features Applications • rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A • DC/DC converters and Off-Line UPS • Qg(tot) = 19nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage Synchronous Rectifi

9.1. fdd2570.pdf Size:97K _fairchild_semi

FDD2582
FDD2582

February 2001 FDD2570    150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4.7 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 90 mΩ @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. • Low gate charge These MOS

9.2. fdd2572 f085.pdf Size:572K _fairchild_semi

FDD2582
FDD2582

S November 2008 FDD2572_F085 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features Applications • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • DC/DC converters and Off-Line UPS • Qg(tot) = 26nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage Synchronous

 9.3. fdd2512.pdf Size:84K _fairchild_semi

FDD2582
FDD2582

August 2001 FDD2512    150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 6.7 A, 150 V RDS(ON) = 420 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 470 mΩ @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature • Low g

9.4. fdd2572 fdu2572.pdf Size:247K _fairchild_semi

FDD2582
FDD2582

September 2002 FDD2572 / FDU2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features Applications • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • DC/DC converters and Off-Line UPS • Qg(tot) = 26nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage Synchrono

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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