Справочник MOSFET. FDD2582

 

FDD2582 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDD2582
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 95 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.066 Ohm
   Тип корпуса: TO252 DPAK
     - подбор MOSFET транзистора по параметрам

 

FDD2582 Datasheet (PDF)

 ..1. Size:268K  fairchild semi
fdd2582.pdfpdf_icon

FDD2582

September 2002FDD2582N-Channel PowerTrench MOSFET150V, 21A, 66mFeatures Applications rDS(ON) = 58m (Typ.), VGS = 10V, ID = 7A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifi

 ..2. Size:476K  onsemi
fdd2582.pdfpdf_icon

FDD2582

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:572K  fairchild semi
fdd2572 f085.pdfpdf_icon

FDD2582

SNovember 2008FDD2572_F085N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous

 9.2. Size:97K  fairchild semi
fdd2570.pdfpdf_icon

FDD2582

February 2001FDD2570150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 90 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOS

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BUK112-50GL | IXFB40N110P | ELM5J400RA | FDMC2610 | QM0007G | FM400TU-07A | 2SK2882

 

 
Back to Top

 


 
.