FDD2582 - описание и поиск аналогов

 

Аналоги FDD2582. Основные параметры


   Наименование производителя: FDD2582
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 95 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.066 Ohm
   Тип корпуса: TO252 DPAK
 

 Аналог (замена) для FDD2582

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDD2582 даташит

 ..1. Size:268K  fairchild semi
fdd2582.pdfpdf_icon

FDD2582

September 2002 FDD2582 N-Channel PowerTrench MOSFET 150V, 21A, 66m Features Applications rDS(ON) = 58m (Typ.), VGS = 10V, ID = 7A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifi

 ..2. Size:476K  onsemi
fdd2582.pdfpdf_icon

FDD2582

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:572K  fairchild semi
fdd2572 f085.pdfpdf_icon

FDD2582

S November 2008 FDD2572_F085 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous

 9.2. Size:97K  fairchild semi
fdd2570.pdfpdf_icon

FDD2582

February 2001 FDD2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 90 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOS

Другие MOSFET... FDD16AN08A0 , FDD16AN08A0F085 , FDD18N20LZ , STU102S , FDD20AN06A0F085 , FDD24AN06LA0F085 , FDD2572 , FDD2572F085 , AO4407 , FDD2670 , STU09N25 , FDD26AN06A0F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 .

History: STS8816

 

 

 


 
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