NCEP6090 Datasheet and Replacement
Type Designator: NCEP6090
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 26.9 nC
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
Package: TO220
NCEP6090 substitution
NCEP6090 Datasheet (PDF)
ncep6090.pdf

http://www.ncepower.com NCEP6090NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
ncep6090gu.pdf

http://www.ncepower.com NCEP6090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low
ncep6090d.pdf

http://www.ncepower.com NCEP6090DNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =90ADS Dswitching performance. Both conduction and switching power R =6.4m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely
ncep6090ak.pdf

http://www.ncepower.com NCEP6090AKNCE N-Channel Super Trench Power MOSFET Description The NCEP6090AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FMH20N60S1
Keywords - NCEP6090 MOSFET datasheet
NCEP6090 cross reference
NCEP6090 equivalent finder
NCEP6090 lookup
NCEP6090 substitution
NCEP6090 replacement
History: FMH20N60S1



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