NCEP60T12T Datasheet and Replacement
Type Designator: NCEP60T12T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 650 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO247
NCEP60T12T substitution
NCEP60T12T Datasheet (PDF)
ncep60t12t.pdf

http://www.ncepower.com NCEP60T12TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t12k.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T12KNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t12a.pdf

Pb Free Product http://www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O
ncep60t12ak.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T12AKNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Datasheet: NCEP40T14G , NCEP40T15A , NCEP40T17A , NCEP6020AS , NCEP6080AG , NCEP6090 , NCEP6090K , NCEP60T12AK , NCEP15T14 , NCEP60T15G , NCEP60T18 , NCEP60T20 , NCEP60T20A , NCEP60T20T , NCEP85T11 , NCEP85T12 , NCEP85T12D .
History: 3SK297 | MTP1N80E | IPS70R950CE | STB12NM50T4 | PSMN2R8-80BS | NCEP026N10F | PSMN2R8-40BS
Keywords - NCEP60T12T MOSFET datasheet
NCEP60T12T cross reference
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History: 3SK297 | MTP1N80E | IPS70R950CE | STB12NM50T4 | PSMN2R8-80BS | NCEP026N10F | PSMN2R8-40BS



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