NCEP60T12T. Аналоги и основные параметры
Наименование производителя: NCEP60T12T
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 155 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 650 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: TO247
Аналог (замена) для NCEP60T12T
- подборⓘ MOSFET транзистора по параметрам
NCEP60T12T даташит
ncep60t12t.pdf
http //www.ncepower.com NCEP60T12T NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t12k.pdf
Pb Free Product http //www.ncepower.com NCEP60T12K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t12a.pdf
Pb Free Product http //www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O
ncep60t12ak.pdf
Pb Free Product http //www.ncepower.com NCEP60T12AK NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Другие MOSFET... NCEP40T14G , NCEP40T15A , NCEP40T17A , NCEP6020AS , NCEP6080AG , NCEP6090 , NCEP6090K , NCEP60T12AK , IRF1405 , NCEP60T15G , NCEP60T18 , NCEP60T20 , NCEP60T20A , NCEP60T20T , NCEP85T11 , NCEP85T12 , NCEP85T12D .
History: BRF65R650C | SML4025AN
History: BRF65R650C | SML4025AN
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