2SK3579-01MR PDF and Equivalents Search

 ..1. Size:101K  1
 2sk3579-01mr.pdf

2SK3579-01MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings Super FAP-G Series TO-220F Features Applications High speed switching Switching regulators Low on-resistance UPS (Uninterruptible Power Supply) No secondary breadown DC-DC converters Low driving power Avalanche-proof Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwis... See More ⇒

 ..2. Size:280K  inchange semiconductor
 2sk3579-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3579-01MR FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 90m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

 8.1. Size:82K  1
 2sk3570 2sk3570-s 2sk3570-z 2sk3570-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3570 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3570 TO-220AB designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 2SK3570-S... See More ⇒

 8.2. Size:82K  1
 2sk3571 2sk3571-s 2sk3571-z 2sk3571-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3571 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3571 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3571 TO-220AB designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 2SK3571-S... See More ⇒

 8.3. Size:86K  1
 2sk3574 2sk3574-s 2sk3574-z 2sk3574-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3574 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3574 TO-220AB characteristics, designed for low voltage high current 2SK3574-S TO-262 applications such as DC/DC converter with synchronous 2S... See More ⇒

 8.4. Size:80K  1
 2sk3572 2sk3572-s 2sk3572-z 2sk3572-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3572 TO-220AB designed for low voltage high current applications such as 2SK3572-S TO-262 DC/DC converter with synchronous ... See More ⇒

 8.5. Size:352K  toshiba
 2sk357.pdf

... See More ⇒

 8.6. Size:193K  renesas
 2sk3576.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.7. Size:197K  renesas
 2sk3577.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.8. Size:213K  renesas
 2sk3575-s-z-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.9. Size:74K  nec
 2sk3573-s-z-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3573 TO-220AB designed for low voltage high current applications such as 2SK3573-S TO-262 DC/DC converter with synchronous ... See More ⇒

 8.10. Size:44K  kexin
 2sk3571.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3571 TO-263 Unit mm +0.2 4.57-0.2 +0.1 1.27-0.1 Features 4.5V drive available. Low on-state resistance, RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.1 0.1max 1.27-0.1 Low gate charge +0.1 0.81-0.1 QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A) 2.54 1Gate +0.2 Built-in gate protection diode 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2... See More ⇒

 8.11. Size:43K  kexin
 2sk3574.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3574 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 = 13.5m MAX. (VGS =10V, ID = 24A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 22nC TYP. (VDD =24 V, VGS =10 V, ID =48A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount... See More ⇒

 8.12. Size:45K  kexin
 2sk3572.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3572 TO-263 Unit mm +0.2 4.57-0.2 +0.1 Features 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A) +0.1 0.1max 1.27-0.1 Low gate charge +0.1 0.81-0.1 QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A) 2.54 1Gate Built-in gate protection diode +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 ... See More ⇒

 8.13. Size:43K  kexin
 2sk3573.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3573 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount d... See More ⇒

 8.14. Size:45K  kexin
 2sk3570.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3570 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =12 m MAX. (VGS =10V, ID =24A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 23 nC TYP. (VDD =16V, VGS =10V, ID =48A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount dev... See More ⇒

 8.15. Size:358K  inchange semiconductor
 2sk3571-zk.pdf

isc N-Channel MOSFET Transistor 2SK3571-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.16. Size:283K  inchange semiconductor
 2sk3571-s.pdf

isc N-Channel MOSFET Transistor 2SK3571-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.17. Size:358K  inchange semiconductor
 2sk3570-z.pdf

isc N-Channel MOSFET Transistor 2SK3570-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.18. Size:284K  inchange semiconductor
 2sk3570-s.pdf

isc N-Channel MOSFET Transistor 2SK3570-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.19. Size:283K  inchange semiconductor
 2sk3572-s.pdf

isc N-Channel MOSFET Transistor 2SK3572-S FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.20. Size:290K  inchange semiconductor
 2sk3571.pdf

isc N-Channel MOSFET Transistor 2SK3571 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.21. Size:283K  inchange semiconductor
 2sk3573-s.pdf

isc N-Channel MOSFET Transistor 2SK3573-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.22. Size:357K  inchange semiconductor
 2sk3572-z.pdf

isc N-Channel MOSFET Transistor 2SK3572-Z FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.23. Size:357K  inchange semiconductor
 2sk3575-zk.pdf

isc N-Channel MOSFET Transistor 2SK3575-ZK FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.24. Size:283K  inchange semiconductor
 2sk3575-s.pdf

isc N-Channel MOSFET Transistor 2SK3575-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.25. Size:357K  inchange semiconductor
 2sk3574-z.pdf

isc N-Channel MOSFET Transistor 2SK3574-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.26. Size:357K  inchange semiconductor
 2sk3574-zk.pdf

isc N-Channel MOSFET Transistor 2SK3574-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 8.27. Size:289K  inchange semiconductor
 2sk3575.pdf

isc N-Channel MOSFET Transistor 2SK3575 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.28. Size:357K  inchange semiconductor
 2sk3575-z.pdf

isc N-Channel MOSFET Transistor 2SK3575-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.29. Size:358K  inchange semiconductor
 2sk3571-z.pdf

isc N-Channel MOSFET Transistor 2SK3571-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.30. Size:357K  inchange semiconductor
 2sk3572-zk.pdf

isc N-Channel MOSFET Transistor 2SK3572-ZK FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.31. Size:357K  inchange semiconductor
 2sk3573-z.pdf

isc N-Channel MOSFET Transistor 2SK3573-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.32. Size:357K  inchange semiconductor
 2sk3573-zk.pdf

isc N-Channel MOSFET Transistor 2SK3573-ZK FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.33. Size:289K  inchange semiconductor
 2sk3574.pdf

isc N-Channel MOSFET Transistor 2SK3574 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.34. Size:358K  inchange semiconductor
 2sk3570-zk.pdf

isc N-Channel MOSFET Transistor 2SK3570-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.35. Size:289K  inchange semiconductor
 2sk3572.pdf

isc N-Channel MOSFET Transistor 2SK3572 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.36. Size:283K  inchange semiconductor
 2sk3574-s.pdf

isc N-Channel MOSFET Transistor 2SK3574-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.37. Size:289K  inchange semiconductor
 2sk3573.pdf

isc N-Channel MOSFET Transistor 2SK3573 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.38. Size:290K  inchange semiconductor
 2sk3570.pdf

isc N-Channel MOSFET Transistor 2SK3570 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒