2SK3579-01MR - описание и поиск аналогов

2SK3579-01MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings Super FAP-G Series TO-220F Features Applications High speed switching Switching regulators Low on-resistance UPS (Uninterruptible Power Supply) No secondary breadown DC-DC converters Low driving power Avalanche-proof Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwis

isc N-Channel MOSFET Transistor 2SK3579-01MR FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 90m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3570 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3570 TO-220AB designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 2SK3570-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3571 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3571 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3571 TO-220AB designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 2SK3571-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3574 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3574 TO-220AB characteristics, designed for low voltage high current 2SK3574-S TO-262 applications such as DC/DC converter with synchronous 2S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3572 TO-220AB designed for low voltage high current applications such as 2SK3572-S TO-262 DC/DC converter with synchronous

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3573 TO-220AB designed for low voltage high current applications such as 2SK3573-S TO-262 DC/DC converter with synchronous

SMD Type MOSFET MOS Field Effect Transistor 2SK3571 TO-263 Unit mm +0.2 4.57-0.2 +0.1 1.27-0.1 Features 4.5V drive available. Low on-state resistance, RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.1 0.1max 1.27-0.1 Low gate charge +0.1 0.81-0.1 QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A) 2.54 1Gate +0.2 Built-in gate protection diode 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2

SMD Type MOSFET MOS Field Effect Transistor 2SK3574 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 = 13.5m MAX. (VGS =10V, ID = 24A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 22nC TYP. (VDD =24 V, VGS =10 V, ID =48A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount

SMD Type MOSFET MOS Field Effect Transistor 2SK3572 TO-263 Unit mm +0.2 4.57-0.2 +0.1 Features 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A) +0.1 0.1max 1.27-0.1 Low gate charge +0.1 0.81-0.1 QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A) 2.54 1Gate Built-in gate protection diode +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2

SMD Type MOSFET MOS Field Effect Transistor 2SK3573 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount d

SMD Type MOSFET MOS Field Effect Transistor 2SK3570 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =12 m MAX. (VGS =10V, ID =24A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 23 nC TYP. (VDD =16V, VGS =10V, ID =48A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount dev

isc N-Channel MOSFET Transistor 2SK3571-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3571-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3570-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3570-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3572-S FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

isc N-Channel MOSFET Transistor 2SK3571 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3573-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3572-Z FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

isc N-Channel MOSFET Transistor 2SK3575-ZK FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3575-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

isc N-Channel MOSFET Transistor 2SK3574-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3574-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

isc N-Channel MOSFET Transistor 2SK3575 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3575-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

isc N-Channel MOSFET Transistor 2SK3571-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3572-ZK FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3573-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3573-ZK FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3574 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3570-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

isc N-Channel MOSFET Transistor 2SK3572 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3574-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3573 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3570 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid