2SK736 Datasheet and Replacement
Type Designator: 2SK736
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO220F
2SK736 substitution
2SK736 Datasheet (PDF)
2sk736.pdf
isc N-Channel MOSFET Transistor 2SK736FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Datasheet: 2SK4123LS , 2SK4179 , 2SK4203LS , 2SK4204LS , 2SK4227JS , 2SK430L , 2SK430S , 2SK591 , AON7506 , 2SK810 , 2SK811 , 2SK895 , 2SK896 , FMW60N070S2HF , 60NM60L-T3P , 60NM60L-T47 , 60NM60G-T3P .
History: CSN04N1P5 | TPCC8001-H | RU30E7H | YJL2303A | IXTT440N055T2 | RU30P4C6 | EFC6602R
Keywords - 2SK736 MOSFET datasheet
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History: CSN04N1P5 | TPCC8001-H | RU30E7H | YJL2303A | IXTT440N055T2 | RU30P4C6 | EFC6602R
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