2SK810 Specs and Replacement
Type Designator: 2SK810
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220
2SK810 substitution
- MOSFET ⓘ Cross-Reference Search
2SK810 datasheet
2sk810.pdf
isc N-Channel MOSFET Transistor 2SK810 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
Detailed specifications: 2SK4179, 2SK4203LS, 2SK4204LS, 2SK4227JS, 2SK430L, 2SK430S, 2SK591, 2SK736, AON6380, 2SK811, 2SK895, 2SK896, FMW60N070S2HF, 60NM60L-T3P, 60NM60L-T47, 60NM60G-T3P, 60NM60G-T47
Keywords - 2SK810 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AO3419L | 2SK4201-S19-AY
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