2SK810 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK810 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

2SK819 PCB 24

isc N-Channel MOSFET Transistor 2SK811 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK818A DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

isc N-Channel MOSFET Transistor 2SK817 FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK818 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay