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2SK811 Specs and Replacement

Type Designator: 2SK811

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220F

2SK811 substitution

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2SK811 datasheet

 ..1. Size:363K  1
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2SK811

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 ..2. Size:279K  inchange semiconductor
2sk811.pdf pdf_icon

2SK811

isc N-Channel MOSFET Transistor 2SK811 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 9.1. Size:355K  1
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2SK811

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 9.2. Size:354K  1
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2SK811

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Detailed specifications: 2SK4203LS, 2SK4204LS, 2SK4227JS, 2SK430L, 2SK430S, 2SK591, 2SK736, 2SK810, IRF530, 2SK895, 2SK896, FMW60N070S2HF, 60NM60L-T3P, 60NM60L-T47, 60NM60G-T3P, 60NM60G-T47, ISC60NM60L

Keywords - 2SK811 MOSFET specs

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