60NM60G-T3P PDF and Equivalents Search

 

60NM60G-T3P Specs and Replacement

Type Designator: 60NM60G-T3P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

Cossⓘ - Output Capacitance: 2730 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO3P

60NM60G-T3P substitution

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60NM60G-T3P datasheet

 7.1. Size:447K  1
 60nm60l 60nm60g.pdf pdf_icon

60NM60G-T3P

UNISONIC TECHNOLOGIES CO., LTD 60NM60 Power MOSFET 60A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 60NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC con... See More ⇒

 8.1. Size:291K  st
 sty60nm60.pdf pdf_icon

60NM60G-T3P

STY60NM60 N-CHANNEL 600V - 0.050 - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STY60NM60 600V ... See More ⇒

 8.2. Size:330K  inchange semiconductor
 isc60nm60l.pdf pdf_icon

60NM60G-T3P

isc N-Channel MOSFET Transistor ISC60NM60L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

Detailed specifications: 2SK736, 2SK810, 2SK811, 2SK895, 2SK896, FMW60N070S2HF, 60NM60L-T3P, 60NM60L-T47, TK10A60D, 60NM60G-T47, ISC60NM60L, ISCD3NK80Z, ISCNH060D, FDN363N, ISCNH363N, ISCNH370W, ISCNH371D

Keywords - 60NM60G-T3P MOSFET specs

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