60NM60G-T3P MOSFET. Datasheet pdf. Equivalent
Type Designator: 60NM60G-T3P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 156 nC
trⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 2730 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO3P
60NM60G-T3P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
60NM60G-T3P Datasheet (PDF)
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isc60nm60l.pdf
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