ISCNH370W PDF and Equivalents Search

 ..1. Size:304K  inchange semiconductor
 iscnh370w.pdf

isc N-Channel MOSFET Transistor ISCNH370W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 95m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒

 7.1. Size:286K  inchange semiconductor
 iscnh371d.pdf

isc N-Channel MOSFET Transistor ISCNH371D FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

 7.2. Size:356K  inchange semiconductor
 iscnh377b.pdf

isc N-Channel MOSFET Transistor ISCNH377B FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 7.3. Size:288K  inchange semiconductor
 iscnh379p.pdf

isc N-Channel MOSFET Transistor ISCNH379P FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 10 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 7.4. Size:580K  inchange semiconductor
 iscnh375w.pdf

isc N-Channel MOSFET Transistor ISCNH375W FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 7.5. Size:356K  inchange semiconductor
 iscnh372b.pdf

isc N-Channel MOSFET Transistor ISCNH372B FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

 7.6. Size:286K  inchange semiconductor
 iscnh374d.pdf

isc N-Channel MOSFET Transistor ISCNH374D FEATURES Drain Current I = 44A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 7.7. Size:283K  inchange semiconductor
 iscnh376l.pdf

isc N-Channel MOSFET Transistor ISCNH376L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 7.8. Size:261K  inchange semiconductor
 iscnh373f.pdf

isc N-Channel MOSFET Transistor ISCNH373F FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 6.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC conv... See More ⇒