Справочник MOSFET. ISCNH370W

 

ISCNH370W Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ISCNH370W
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 337 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для ISCNH370W

   - подбор ⓘ MOSFET транзистора по параметрам

 

ISCNH370W Datasheet (PDF)

 ..1. Size:304K  inchange semiconductor
iscnh370w.pdfpdf_icon

ISCNH370W

isc N-Channel MOSFET Transistor ISCNH370WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 95m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

 7.1. Size:286K  inchange semiconductor
iscnh371d.pdfpdf_icon

ISCNH370W

isc N-Channel MOSFET Transistor ISCNH371DFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 7.2. Size:356K  inchange semiconductor
iscnh377b.pdfpdf_icon

ISCNH370W

isc N-Channel MOSFET Transistor ISCNH377BFEATURESDrain Current : I = 200A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 7.3. Size:288K  inchange semiconductor
iscnh379p.pdfpdf_icon

ISCNH370W

isc N-Channel MOSFET Transistor ISCNH379PFEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 10(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Другие MOSFET... 60NM60L-T47 , 60NM60G-T3P , 60NM60G-T47 , ISC60NM60L , ISCD3NK80Z , ISCNH060D , FDN363N , ISCNH363N , STP80NF70 , ISCNH371D , ISCNH372B , ISCNH373F , ISCNH374D , ISCNH375W , ISCNH376L , ISCNH377B , ISCNH379P .

History: STP18N60M2 | SML1004R2AN | 2N6661CSM4 | FCMT250N65S3 | APT1201R2SLL | KIA2910A-3P

 

 
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