ISCNH370W - описание и поиск аналогов

 

ISCNH370W. Аналоги и основные параметры

Наименование производителя: ISCNH370W

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 337 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm

Тип корпуса: TO247

Аналог (замена) для ISCNH370W

- подборⓘ MOSFET транзистора по параметрам

 

ISCNH370W даташит

 ..1. Size:304K  inchange semiconductor
iscnh370w.pdfpdf_icon

ISCNH370W

isc N-Channel MOSFET Transistor ISCNH370W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 95m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

 7.1. Size:286K  inchange semiconductor
iscnh371d.pdfpdf_icon

ISCNH370W

isc N-Channel MOSFET Transistor ISCNH371D FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 7.2. Size:356K  inchange semiconductor
iscnh377b.pdfpdf_icon

ISCNH370W

isc N-Channel MOSFET Transistor ISCNH377B FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 7.3. Size:288K  inchange semiconductor
iscnh379p.pdfpdf_icon

ISCNH370W

isc N-Channel MOSFET Transistor ISCNH379P FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 10 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

Другие MOSFET... 60NM60L-T47 , 60NM60G-T3P , 60NM60G-T47 , ISC60NM60L , ISCD3NK80Z , ISCNH060D , FDN363N , ISCNH363N , 10N65 , ISCNH371D , ISCNH372B , ISCNH373F , ISCNH374D , ISCNH375W , ISCNH376L , ISCNH377B , ISCNH379P .

History: SMK0825FZ | PJM3401PSA | AP4532GM-HF | BSR302N | APM2605C | CS8N80A8H

 

 

 

 

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