STF23N80K5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STF23N80K5
Marking Code: 23N80K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 33 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220F
STF23N80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STF23N80K5 Datasheet (PDF)
stf23n80k5.pdf
STF23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF23N80K5 800 V 0.28 16 A 35 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected TO-220F
stf23n80k5.pdf
STF23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF23N80K5 800 V 0.28 16 A 35 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected TO-220F
stf23n80k5.pdf
isc N-Channel MOSFET Transistor STF23N80K5FEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf
STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited
stb23nm60nd sti23nm60nd stf23nm60nd stp23nm60nd stw23nm60nd.pdf
STx23NM60NDN-channel 600 V, 0.150 , 19.5 A, FDmesh II Power MOSFET(with fast diode) DPAK, IPAK, TO-220, TO-220FP, TO-247FeaturesVDSS RDS(on) Type ID3max.3(@Tjmax)1 21STx23NM60ND 650 V
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf
STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited
stb23nm50n stf23nm50n stp23nm50n stw23nm50n.pdf
STB23NM50N, STF23NM50NSTP23NM50N, STW23NM50NN-channel 500 V, 0.162 , 17 A TO-220, TO-220FP, TO-247, D2PAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max33221STB23NM50N1TO-220FP TO-220STF23NM50N550 V
stf23nm50n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF23NM50NFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
