SW3N90U Datasheet and Replacement. Cross Reference Search

SW3N90U Datasheet (PDF)

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SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS : 900V ID : 3A High ruggedness Low RDS(ON) (Typ 4.8)@VGS=10V RDS(ON) : 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou

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isc N-Channel MOSFET Transistor SW3N90UFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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8.2. Size:508K samsung
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Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V2 Low RDS(ON) : 4.679 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

Datasheet: ISF40NF20 , ISH3N150 , IXFY26N30X3 , IXFA26N30X3 , IXFP26N30X3 , MMD60R900QRH , STF23N80K5 , STF6N90K5 , IRFZ48N , SWI3N90U , SWMI3N90U , SWD3N90U , SCT10N120 , SCT20N120 , STB100N6F7 , STB10LN80K5 , STB15N65M5 .