All MOSFET. SWI3N90U Datasheet

 

SWI3N90U Datasheet and Replacement


   Type Designator: SWI3N90U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.8 Ohm
   Package: TO251
 

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SWI3N90U Datasheet (PDF)

 ..1. Size:887K  1
 sw3n90u swi3n90u swmi3n90u swd3n90u.pdf pdf_icon

SWI3N90U

SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS : 900V ID : 3A High ruggedness Low RDS(ON) (Typ 4.8)@VGS=10V RDS(ON) : 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou

 ..2. Size:809K  samwin
 swi3n90u swmi3n90u swd3n90u.pdf pdf_icon

SWI3N90U

SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS : 900V ID : 3A High ruggedness Low RDS(ON) (Typ 4.8)@VGS=10V RDS(ON) : 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou

Datasheet: ISH3N150 , IXFY26N30X3 , IXFA26N30X3 , IXFP26N30X3 , MMD60R900QRH , STF23N80K5 , STF6N90K5 , SW3N90U , NCEP15T14 , SWMI3N90U , SWD3N90U , SCT10N120 , SCT20N120 , STB100N6F7 , STB10LN80K5 , STB15N65M5 , STB15NK50Z .

History: IPA65R280C6 | 2SK2995 | PMV170UN | DMN62D0LFD | MRF156 | STF20N65M5

Keywords - SWI3N90U MOSFET datasheet

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