SWI3N90U Specs and Replacement
Type Designator: SWI3N90U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 178.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.8 Ohm
Package: TO251
SWI3N90U substitution
- MOSFET ⓘ Cross-Reference Search
SWI3N90U datasheet
sw3n90u swi3n90u swmi3n90u swd3n90u.pdf
SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS 900V ID 3A High ruggedness Low RDS(ON) (Typ 4.8 )@VGS=10V RDS(ON) 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou... See More ⇒
swi3n90u swmi3n90u swd3n90u.pdf
SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS 900V ID 3A High ruggedness Low RDS(ON) (Typ 4.8 )@VGS=10V RDS(ON) 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou... See More ⇒
Detailed specifications: ISH3N150, IXFY26N30X3, IXFA26N30X3, IXFP26N30X3, MMD60R900QRH, STF23N80K5, STF6N90K5, SW3N90U, IRF1405, SWMI3N90U, SWD3N90U, SCT10N120, SCT20N120, STB100N6F7, STB10LN80K5, STB15N65M5, STB15NK50Z
Keywords - SWI3N90U MOSFET specs
SWI3N90U cross reference
SWI3N90U equivalent finder
SWI3N90U pdf lookup
SWI3N90U substitution
SWI3N90U replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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