SWD3N90U MOSFET Datasheet: N-Ch, 900V, 3A. Full specification with pinout and replacement list

SWD3N90U Specs and Replacement

Type Designator: SWD3N90U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.8 Ohm

Package: TO252

SWD3N90U substitution

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SWD3N90U datasheet

..1. Size:887K 1
sw3n90u swi3n90u swmi3n90u swd3n90u.pdf pdf_icon

SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS 900V ID 3A High ruggedness Low RDS(ON) (Typ 4.8 )@VGS=10V RDS(ON) 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou... See More ⇒

..2. Size:809K samwin
swi3n90u swmi3n90u swd3n90u.pdf pdf_icon

9.1. Size:655K samwin
swf3n80d swn3n80d swd3n80d.pdf pdf_icon

SW3N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 BVDSS 800V TO-220F High ruggedness ID 3A Low RDS(ON) (Typ 3.8 )@VGS=10V RDS(ON) 3.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 Application DC-DC LED PC 3 3 3 1 1. Gate 2. Drain 3. Source ... See More ⇒

Detailed specifications: IXFA26N30X3, IXFP26N30X3, MMD60R900QRH, STF23N80K5, STF6N90K5, SW3N90U, SWI3N90U, SWMI3N90U, IRFZ48N, SCT10N120, SCT20N120, STB100N6F7, STB10LN80K5, STB15N65M5, STB15NK50Z, STB15NK50Z-1, STB17N80K5