SWD3N90U MOSFET. Datasheet pdf. Equivalent
Type Designator: SWD3N90U
Marking Code: SW3N90U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 49 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.8 Ohm
Package: TO252
SWD3N90U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWD3N90U Datasheet (PDF)
sw3n90u swi3n90u swmi3n90u swd3n90u.pdf
SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS : 900V ID : 3A High ruggedness Low RDS(ON) (Typ 4.8)@VGS=10V RDS(ON) : 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou
swi3n90u swmi3n90u swd3n90u.pdf
SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS : 900V ID : 3A High ruggedness Low RDS(ON) (Typ 4.8)@VGS=10V RDS(ON) : 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou
swf3n80d swn3n80d swd3n80d.pdf
SW3N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 BVDSS : 800V TO-220F High ruggedness ID : 3A Low RDS(ON) (Typ 3.8)@VGS=10V RDS(ON) : 3.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 Application: DC-DCLEDPC 3 3 3 1 1. Gate 2. Drain 3. Source
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
