All MOSFET. SCT10N120 Datasheet

 

SCT10N120 Datasheet and Replacement


   Type Designator: SCT10N120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
   Package: HIP247
      - MOSFET Cross-Reference Search

 

SCT10N120 Datasheet (PDF)

 ..1. Size:232K  st
 sct10n120.pdf pdf_icon

SCT10N120

SCT10N120DatasheetSilicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., TJ = 150 C) in an HiP247 packageFeatures Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 C) Very fast and robust intrinsic body diode Low capacitance321ApplicationsHiP247 Solar inverters, UPSD(2, TA

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: PB606BX

Keywords - SCT10N120 MOSFET datasheet

 SCT10N120 cross reference
 SCT10N120 equivalent finder
 SCT10N120 lookup
 SCT10N120 substitution
 SCT10N120 replacement

 

 
Back to Top

 


 
.