SCT10N120 PDF and Equivalents Search

 

SCT10N120 Specs and Replacement

Type Designator: SCT10N120

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm

Package: HIP247

SCT10N120 substitution

- MOSFET ⓘ Cross-Reference Search

 

SCT10N120 datasheet

 ..1. Size:232K  st
 sct10n120.pdf pdf_icon

SCT10N120

SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., TJ = 150 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 C) Very fast and robust intrinsic body diode Low capacitance 3 2 1 Applications HiP247 Solar inverters, UPS D(2, TA... See More ⇒

Detailed specifications: IXFP26N30X3, MMD60R900QRH, STF23N80K5, STF6N90K5, SW3N90U, SWI3N90U, SWMI3N90U, SWD3N90U, IRFZ46N, SCT20N120, STB100N6F7, STB10LN80K5, STB15N65M5, STB15NK50Z, STB15NK50Z-1, STB17N80K5, STB200NF04

Keywords - SCT10N120 MOSFET specs

 SCT10N120 cross reference

 SCT10N120 equivalent finder

 SCT10N120 pdf lookup

 SCT10N120 substitution

 SCT10N120 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.