All MOSFET. SCT10N120 Datasheet

 

SCT10N120 Datasheet and Replacement


   Type Designator: SCT10N120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
   Package: HIP247
 

 SCT10N120 substitution

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SCT10N120 Datasheet (PDF)

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SCT10N120

SCT10N120DatasheetSilicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., TJ = 150 C) in an HiP247 packageFeatures Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 C) Very fast and robust intrinsic body diode Low capacitance321ApplicationsHiP247 Solar inverters, UPSD(2, TA

Datasheet: IXFP26N30X3 , MMD60R900QRH , STF23N80K5 , STF6N90K5 , SW3N90U , SWI3N90U , SWMI3N90U , SWD3N90U , STP65NF06 , SCT20N120 , STB100N6F7 , STB10LN80K5 , STB15N65M5 , STB15NK50Z , STB15NK50Z-1 , STB17N80K5 , STB200NF04 .

History: KTK919S | SMK830F | WMJ26N65F2 | NTBG060N090SC1 | FDB2670

Keywords - SCT10N120 MOSFET datasheet

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