All MOSFET. SCT10N120 Datasheet

 

SCT10N120 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SCT10N120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5(typ) V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
   Package: HIP247

 SCT10N120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SCT10N120 Datasheet (PDF)

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 sct10n120.pdf

SCT10N120 SCT10N120

SCT10N120DatasheetSilicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., TJ = 150 C) in an HiP247 packageFeatures Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 C) Very fast and robust intrinsic body diode Low capacitance321ApplicationsHiP247 Solar inverters, UPSD(2, TA

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDD13AN06A0

 

 
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