STB33N60DM2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB33N60DM2
Marking Code: 33N60DM2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 87 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: TO263
STB33N60DM2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB33N60DM2 Datasheet (PDF)
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