STD20NF06L-1 MOSFET Datasheet: N-Ch, 60V, 24A. Full specification with pinout and replacement list

STD20NF06L-1 Specs and Replacement

Type Designator: STD20NF06L-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO251

STD20NF06L-1 substitution

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STD20NF06L-1 datasheet

..1. Size:414K st
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STD20NF06L STD20NF06L-1 N-channel 60V - 0.032 - 24A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD20NF06L 60V ... See More ⇒

..2. Size:410K st
std20nf06l std20nf06l-1.pdf pdf_icon

STD20NF06L STD20NF06L-1 N-channel 60V - 0.032 - 24A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD20NF06L 60V ... See More ⇒

4.1. Size:1181K umw-ic
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R STD20NF06L UMW 60V N-Channel Enhancement Mode Power MOSFET UMW STD20NF06L General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25m (Typ) @ VGS =10V RDS(ON),30m (Typ) @ VGS =4.5V Advanced Trench Technology Excellent RD... See More ⇒

4.2. Size:286K inchange semiconductor
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isc N-Channel MOSFET Transistor STD20NF06L FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒