STD8N60DM2 Datasheet and Replacement

STD8N60DM2DatasheetN-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD8N60DM2 600 V 600 m 8 A 85 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

STD8N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD8N06 60 V

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

This datasheet has been downloaded from http://www.digchip.com at this page

STD8NM50N, STF8NM50NSTP8NM50N, STU8NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAK, IPAK, TO-220 and TO-220FPFeaturesOrder codes VDSS@TJMAX RDS(on)max. ID3312STD8NM50N1DPAKSTF8NM50NIPAK550 V

STD8NF25N-channel 250 V, 318 m, 8 A STripFET II Power MOSFET in DPAK packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmax.STD8NF25 250 V

STD8N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD8N06 60 V

STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STD8NM60ND 650 V

STD8NS25N-CHANNEL 250V - 0.38 - 8A DPAKMESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD8NS25 250 V

STD8N80K5N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTSTD8N80K5 800 V 0.95 6 A 110 WTAB Worldwide best FOM (figure of merit)3 Ultra low gate charge1 100% avalanche testedDPAK Zener protectedApplications Switching applicationsF

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V