STD8N60DM2 Specs and Replacement
Type Designator: STD8N60DM2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 24 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO252
STD8N60DM2 substitution
- MOSFET ⓘ Cross-Reference Search
STD8N60DM2 datasheet
std8n60dm2.pdf
STD8N60DM2 Datasheet N-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK package Features VDS RDS(on) max. ID PTOT Order code TAB STD8N60DM2 600 V 600 m 8 A 85 W 3 2 1 Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze... See More ⇒
std8n06-1 std8n06t4.pdf
STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒
Detailed specifications: STD15N50M2AG, STD20NF06L-1, STQ2HNK60Z-AP, STD4LN80K5, STD4N90K5, STD5N60DM2, STD64N4F6AG, STD7LN80K5, AO3400, STF11N60M2-EP, STF11N65M2-045Y, STF13N60DM2, STF140N6F7, STF15N60M2-EP, STF16N60M6, STF20N90K5, STF20NM50FD
Keywords - STD8N60DM2 MOSFET specs
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STD8N60DM2 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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