STF11N60M2-EP MOSFET. Datasheet pdf. Equivalent
Type Designator: STF11N60M2-EP
Marking Code: 11N60M2EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.75 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.4 nC
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 22 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.595 Ohm
Package: TO220F
STF11N60M2-EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STF11N60M2-EP Datasheet (PDF)
stf11n60m2-ep.pdf
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stf11n65m2 stfi11n65m2.pdf
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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: CHM62A2PAGP | SIHG17N60D
History: CHM62A2PAGP | SIHG17N60D
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