STFI11NM65N
MOSFET. Datasheet pdf. Equivalent
Type Designator: STFI11NM65N
Marking Code: 11NM65N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 10.8
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.455
Ohm
Package: I2PAKFP
STFI11NM65N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STFI11NM65N
Datasheet (PDF)
..1. Size:1258K st
std11nm65n stf11nm65n stfi11nm65n stp11nm65n.pdf
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V
7.1. Size:866K st
stf11n65m2 stf11n65m2 stfi11n65m2.pdf
STF11N65M2, STFI11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTF11N65M2650 V 0.67 7 ASTFI11N65M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation12231 Low gate input resistance2TO-220FPI P
7.2. Size:735K st
stf11n65m2 stfi11n65m2.pdf
STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh M2 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF11N65M2 650 V 0.68 7 A 25 W STFI11N65M2 Extremely low gate charge TO-220FP I2PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche teste
9.1. Size:367K st
stfi12n60m2.pdf
STFI12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAKFP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTFI12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching application
9.2. Size:776K st
stfi13nm60n.pdf
STFI13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in IPAKFP packageDatasheet production dataFeaturesVDSS RDS(on) Type ID PTOT(@Tjmax) maxSTFI13NM60N 650 V
9.3. Size:1300K st
stb10n65k3 stfi10n65k3 stp10n65k3.pdf
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3
9.4. Size:1213K st
stf130n10f3 stfi130n10f3 sth130n10f3-2 stp130n10f3.pdf
STF130N10F3, STFI130N10F3,STH130N10F3-2, STP130N10F3N-channel 100 V, 7.8 m typ., 120 A STripFETIII Power MOSFET in TO-220FP, IPAKFP, HPAK-2 and TO-220 packagesDatasheet production dataFeaturesRDS(on) Order codes VDSS max. ID3STF130N10F3219.6 m 46 A12STFI130N10F3 3TO-220FP100 VIPAKFPSTH130N10F3-2 9.3 mTAB120 ASTP130N10F3 9.6 m TAB
9.5. Size:1020K st
stfi13n80k5.pdf
STFI13N80K5N-channel 800 V, 0.37 typ.,12 A MDmesh K5 Power MOSFET in an IPAKFP packageDatasheet - production dataFeatures Order code VDS RDS(on) ID PTOTSTFI13N80K5 800 V 0.45 12 A 35 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate Industrys lowest RDS(on) x area123 Industrys best figure of
9.6. Size:496K st
stf15n60m2-ep stfi15n60m2-ep.pdf
STF15N60M2-EP, STFI15N60M2-EP N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in TO-220FP and IPAKFP packages Datasheet - production data Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications TO-220FP I2PAKFP (TO-281) Switching
9.7. Size:1131K st
stf13n60m2 stfi13n60m2.pdf
STF13N60M2, STFI13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF13N60M2650 V 0.38 11 ASTFI13N60M232 Extremely low gate charge1123TO-220FP Lower RDS(on) x area vs previous generationI2PAKFP Low gate input r
9.8. Size:948K st
stf10n62k3 stfi10n62k3 sti10n62k3 stp10n62k3.pdf
STF10N62K3, STFI10N62K3,STI10N62K3, STP10N62K3N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 packagesDatasheet - production dataFeaturesRDS(on) Type VDSS max ID Pw32STF10N62K31128.4 A(1) 30 W3TO-220FPSTFI10N62K3IPAKFP620 V
9.9. Size:948K st
stfi10n62k3.pdf
STF10N62K3, STFI10N62K3,STI10N62K3, STP10N62K3N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 packagesDatasheet - production dataFeaturesRDS(on) Type VDSS max ID Pw32STF10N62K31128.4 A(1) 30 W3TO-220FPSTFI10N62K3IPAKFP620 V
9.10. Size:914K st
stf15nm65n stfi15nm65n.pdf
STF15NM65N,STFI15NM65NN-channel 650 V, 0.35 typ., 12 A MDmesh II Power MOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeatures Order code VDSS @Tjmax RDS(on) max. IDSTF15NM65N32 710 V 0.38 12 A1STFI15NM65N1TO-220FP 23 100% avalanche testedI 2PAKFP Low input capacitance and gate charge(TO-281) Low gate input resistance
9.11. Size:1005K st
stfi15nm65n.pdf
STF15NM65N, STFI15NM65N, STP15NM65NN-channel 650 V, 0.35 typ., 12 A MDmesh II Power MOSFETs in TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeatures Order codes VDSS @Tjmax RDS(on) max. IDSTF15NM65N321STFI15NM65N 710 V 0.38 12 A1TO-220FP 23STP15NM65NI 2PAKFPTAB 100% avalanche tested Low input capacitance and gate charge3
9.12. Size:856K st
stf13n95k3 stfi13n95k3 stp13n95k3 stw13n95k3.pdf
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3N-channel 950 V, 0.68 typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247Datasheet - production dataFeaturesOrder codes VDSS RDS(on)max ID PTOTSTF13N95K340 WSTFI13N95K3950 V
9.13. Size:564K st
stf13n65m2 stfi13n65m2.pdf
STF13N65M2, STFI13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 PowerMOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order code VDS max IDSTF13N65M2650 V 0.43 10ASTFI13N65M2 Extremely low gate charge321213 Excellent output capacitance (Coss) profileTO-220FP I2PAKFP (TO-281) 100% avalanche tested
9.14. Size:1300K st
stb10n65k3 stf10n65k3 stfi10n65k3 stp10n65k3.pdf
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3
9.15. Size:919K st
stf15n65m5 stfi15n65m5 stp15n65m5.pdf
STF15N65M5, STFI15N65M5, STP15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax max321STF15N65M5TO-220FPSTFI15N65M5 710 V
9.16. Size:524K st
stfi10nk60z.pdf
STFI10NK60ZN-channel 600 V, 0.65 , 10 A, Zener-protected SuperMESH Power MOSFET in IPAKFP packageDatasheet production dataFeaturesRDS(on) Type VDSS ID PTOTmaxSTFI10NK60Z 600 V
9.17. Size:510K st
stfi13nk60z.pdf
STFI13NK60ZN-channel 600 V, 0.48 , 13 A, Zener-protected SuperMESHPower MOSFET in IPAKFP packageDatasheet production dataFeaturesRDS(on) Order code VDSS ID PTOTmaxSTFI13NK60Z 600 V
Datasheet: AM3401
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