All MOSFET. STH15810-2 Datasheet

 

STH15810-2 Datasheet and Replacement


   Type Designator: STH15810-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 1510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: H2PAK-2
 

 STH15810-2 substitution

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STH15810-2 Datasheet (PDF)

 ..1. Size:965K  st
 sth15810-2.pdf pdf_icon

STH15810-2

STH15810-2N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on)max ID PTOTSTH15810-2 100 V 0.0039 110 A 250 WTAB 100% avalanche tested Ultra low on-resistance231 Applications2 Switching applicationsH PAK-2DescriptionThis N-channel Power MOSFETs utilize STr

 9.1. Size:336K  1
 sth15n50 sth15n50fi stw15n50.pdf pdf_icon

STH15810-2

 9.2. Size:206K  st
 sth15nb50fi stw15nb50.pdf pdf_icon

STH15810-2

STW15NB50STH15NB50FIN-CHANNEL 500V - 0.33 - 14.6A -T0-247/ISOWATT218 PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW15NB50 500 V

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 sth150n10f7-2.pdf pdf_icon

STH15810-2

STH150N10F7-2N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max ID PTOTSTH150N10F7-2 100 V 0.0039 110 A 250 WTAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 2 Low Crss/Ciss ratio for EMI immunity31 High avalanche ruggedness2H

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Datasheet: STFI9N60M2 , STFI9N80K5 , STFU10N80K5 , STFU15N80K5 , STFU16N65M2 , STFU18N65M2 , STFU23N80K5 , STFU9N65M2 , IRLZ44N , STH410N4F7-2AG , STH410N4F7-6AG , STH6N95K5-2 , STI100N10F7 , STI14NM50N , STI28N60M2 , STI34N65M5 , STI6N95K5 .

History: FBM75N68P | K2N7002K | WMM80N08TS | FM6L5202 | KIA2301 | TMU4N60H | STE336S

Keywords - STH15810-2 MOSFET datasheet

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