STH15810-2 MOSFET Datasheet: N-Ch, 100V, 110A. Full specification with pinout and replacement list

STH15810-2 Specs and Replacement

Type Designator: STH15810-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 1510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: H2PAK-2

STH15810-2 substitution

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STH15810-2 datasheet

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STH15810-2 N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - preliminary data Features Order code VDS RDS(on)max ID PTOT STH15810-2 100 V 0.0039 110 A 250 W TAB 100% avalanche tested Ultra low on-resistance 2 3 1 Applications 2 Switching applications H PAK-2 Description This N-channel Power MOSFETs utilize STr... See More ⇒

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STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33 - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW15NB50 500 V ... See More ⇒

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STH150N10F7-2 N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 110 A 250 W TAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 2 Low Crss/Ciss ratio for EMI immunity 3 1 High avalanche ruggedness 2 H... See More ⇒