All MOSFET. STH410N4F7-6AG Datasheet

 

STH410N4F7-6AG Datasheet and Replacement


   Type Designator: STH410N4F7-6AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 365 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 198 nS
   Cossⓘ - Output Capacitance: 3500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: H2PAK-6
 

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STH410N4F7-6AG Datasheet (PDF)

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STH410N4F7-6AG

STH410N4F7-2AG, STH410N4F7-6AG Automotive-grade N-channel 40 V, 0.8 m typ., 200 A STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data Features R DS(on)Order code VDS ID PTOT max. STH410N4F7-2AG 40 V 1.1 m 200 A 365 W STH410N4F7-6AG Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on)

Datasheet: STFU10N80K5 , STFU15N80K5 , STFU16N65M2 , STFU18N65M2 , STFU23N80K5 , STFU9N65M2 , STH15810-2 , STH410N4F7-2AG , 5N65 , STH6N95K5-2 , STI100N10F7 , STI14NM50N , STI28N60M2 , STI34N65M5 , STI6N95K5 , STL10N65M2 , STL130N6F7 .

History: TPC8004 | SLD2N65UZ | SSW65R190S2R | STD96N3LLH6 | AP4800DGM-HF | YJS8205A | HM25N08D

Keywords - STH410N4F7-6AG MOSFET datasheet

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