STH410N4F7-6AG Datasheet and Replacement
Type Designator: STH410N4F7-6AG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 365 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 198 nS
Cossⓘ - Output Capacitance: 3500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
Package: H2PAK-6
STH410N4F7-6AG substitution
STH410N4F7-6AG Datasheet (PDF)
sth410n4f7-2ag sth410n4f7-6ag.pdf
STH410N4F7-2AG, STH410N4F7-6AG Automotive-grade N-channel 40 V, 0.8 m typ., 200 A STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data Features R DS(on)Order code VDS ID PTOT max. STH410N4F7-2AG 40 V 1.1 m 200 A 365 W STH410N4F7-6AG Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on)
Datasheet: STFU10N80K5 , STFU15N80K5 , STFU16N65M2 , STFU18N65M2 , STFU23N80K5 , STFU9N65M2 , STH15810-2 , STH410N4F7-2AG , CS150N03A8 , STH6N95K5-2 , STI100N10F7 , STI14NM50N , STI28N60M2 , STI34N65M5 , STI6N95K5 , STL10N65M2 , STL130N6F7 .
History: TK31E60W | TK31E60X | 2SK2224-01R | JMSH0602PK | FTA14N50C | AP2320N-HF | AP4503BGO-HF
Keywords - STH410N4F7-6AG MOSFET datasheet
STH410N4F7-6AG cross reference
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STH410N4F7-6AG substitution
STH410N4F7-6AG replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: TK31E60W | TK31E60X | 2SK2224-01R | JMSH0602PK | FTA14N50C | AP2320N-HF | AP4503BGO-HF
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