STI28N60M2 Datasheet and Replacement
Type Designator: STI28N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO262
STI28N60M2 substitution
STI28N60M2 Datasheet (PDF)
stb28n60m2 sti28n60m2 stp28n60m2 stw28n60m2.pdf

STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in DPAK, IPAK, TO-220 and TO-247 Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTB28N60M2 STI28N60M2 650 V 0.150 22 A STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (C ) profile
Datasheet: STFU23N80K5 , STFU9N65M2 , STH15810-2 , STH410N4F7-2AG , STH410N4F7-6AG , STH6N95K5-2 , STI100N10F7 , STI14NM50N , IRF1407 , STI34N65M5 , STI6N95K5 , STL10N65M2 , STL130N6F7 , STL140N6F7 , STL33N60DM2 , STL7N60M2 , STL90N6F7 .
History: NCE3402 | IRLU2905PBF | SFP1800N650C2 | RAQ045P01 | HSBB3214 | IPD70R900P7S | IRFAF50
Keywords - STI28N60M2 MOSFET datasheet
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STI28N60M2 replacement
History: NCE3402 | IRLU2905PBF | SFP1800N650C2 | RAQ045P01 | HSBB3214 | IPD70R900P7S | IRFAF50



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