STL33N60DM2 Datasheet and Replacement
Type Designator: STL33N60DM2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 87 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: POWERFLAT8X8HV
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STL33N60DM2 Datasheet (PDF)
stl33n60dm2.pdf

STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features VDS @ Order code RDS(on)max ID T Jmax5STL33N60DM2 650 V 0.140 21 A 432 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% ava
stl33n60m2.pdf

STL33N60M2 N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ T R I Jmax DS(on)max DSTL33N60M2 650 V 0.135 22 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching app
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRFIZ48V | IRF640NS | WM03DP50A | P1820BD | AP3R303GMT | BRFL10N65S | WCM2001
Keywords - STL33N60DM2 MOSFET datasheet
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History: IRFIZ48V | IRF640NS | WM03DP50A | P1820BD | AP3R303GMT | BRFL10N65S | WCM2001



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