STL33N60DM2 MOSFET Datasheet: N-Ch, 600V, 21A. Full specification with pinout and replacement list

STL33N60DM2 Specs and Replacement

Type Designator: STL33N60DM2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: POWERFLAT8X8HV

STL33N60DM2 substitution

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STL33N60DM2 datasheet

..1. Size:778K st
stl33n60dm2.pdf pdf_icon

STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features V DS @ Order code RDS(on)max ID T Jmax 5 STL33N60DM2 650 V 0.140 21 A 4 3 2 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% ava... See More ⇒

6.1. Size:850K st
stl33n60m2.pdf pdf_icon

STL33N60M2 N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V DS @ T R I Jmax DS(on)max D STL33N60M2 650 V 0.135 22 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching app... See More ⇒

Detailed specifications: STI100N10F7, STI14NM50N, STI28N60M2, STI34N65M5, STI6N95K5, STL10N65M2, STL130N6F7, STL140N6F7, IRF1407, STL7N60M2, STL90N6F7, STP10LN80K5, STP10N80K5, STP110N8F7, STP130N6F7, STP13N60DM2, STP15810