STL7N60M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL7N60M2
Marking Code: 7N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.8 nC
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 15.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: POWERFLAT5X5
STL7N60M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL7N60M2 Datasheet (PDF)
stl7n60m2.pdf
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stl7n6lf3.pdf
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stl7n10f7.pdf
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stl7n80k5.pdf
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stl7nm60n.pdf
STL7NM60NN-channel 600 V, 0.805 , 5.8 A PowerFLAT (5x5)MDmesh II Power MOSFETFeaturesVDSS @ RDS(on) Order code IDTJMAX max.STL7NM60N 650 V
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AM7410N | IXTH42N20 | HUFA75829D3ST | IRF530NLPBF | FDM606P
History: AM7410N | IXTH42N20 | HUFA75829D3ST | IRF530NLPBF | FDM606P
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