STL90N6F7
MOSFET. Datasheet pdf. Equivalent
Type Designator: STL90N6F7
Marking Code: 90N6F7
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 94
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 17.6
nS
Cossⓘ -
Output Capacitance: 880
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054
Ohm
Package: POWERFLAT5X6
STL90N6F7
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL90N6F7
Datasheet (PDF)
..1. Size:375K st
stl90n6f7.pdf 
STL90N6F7 N-channel 60 V, 0.0046 typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) DSTL90N6F7 60 V 0.0054 90 A 123 Among the lowest RDS(on) on the market 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity PowerFLAT 5x6 High avalanche rugg
8.1. Size:445K st
stl90n10f7.pdf
STL90N10F7 N-channel 100 V, 0.007 typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL90N10F7 100 V 0.008 70 A 100 W 123 Among the lowest RDS(on) on the market 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity PowerFLAT 5x6 High
8.2. Size:668K st
stl90n3llh6.pdf
STL90N3LLH6N-channel 30 V, 0.0038 , 24 A PowerFLAT (5x6)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL90N3LLH6 30 V 0.0045 24 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 5x6 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Ver
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