All MOSFET. STP45N60DM6 Datasheet

 

STP45N60DM6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP45N60DM6
   Marking Code: 45N60DM6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 210 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 25 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.75 V
   Maximum Drain Current |Id|: 30 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 44 nC
   Rise Time (tr): 5.3 nS
   Drain-Source Capacitance (Cd): 120 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.099 Ohm
   Package: TO220

 STP45N60DM6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP45N60DM6 Datasheet (PDF)

 ..1. Size:817K  st
stp45n60dm6 stw45n60dm6.pdf

STP45N60DM6
STP45N60DM6

STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP45N60DM6 600 V 0.099 30 A STW45N60DM6 33 Fast-recovery body diode 221 Lower R x area vs previous generation DS(on)1 Low gate charge, input capacitan

 7.1. Size:1678K  st
stb45n65m5 stf45n65m5 stp45n65m5.pdf

STP45N60DM6
STP45N60DM6

STB45N65M5, STF45N65M5, STP45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTAB2 Order codes VDSS @ TJmax RDS(on) max ID31STB45N65M532D2PAK1STF45N65M5 710 V 0.078 35 ATO-220FPSTP45N65M5TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa

 7.2. Size:1336K  st
stb45n65m5 stf45n65m5 stp45n65m5 stw45n65m5.pdf

STP45N60DM6
STP45N60DM6

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeatures TAB2VDSS @ RDS(on) 3Order code ID1TJmax max32D2PAK1STB45N65M5TO-220FPTABSTF45N65M5710 V

 7.3. Size:288K  inchange semiconductor
stp45n65m5.pdf

STP45N60DM6
STP45N60DM6

isc N-Channel MOSFET Transistor STP45N65M5FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 78m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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