All MOSFET. STP45N60DM6 Datasheet

 

STP45N60DM6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP45N60DM6
   Marking Code: 45N60DM6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.75 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO220

 STP45N60DM6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP45N60DM6 Datasheet (PDF)

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 stp45n60dm6 stw45n60dm6.pdf

STP45N60DM6 STP45N60DM6

STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP45N60DM6 600 V 0.099 30 A STW45N60DM6 33 Fast-recovery body diode 221 Lower R x area vs previous generation DS(on)1 Low gate charge, input capacitan

 7.1. Size:1678K  st
 stb45n65m5 stf45n65m5 stp45n65m5.pdf

STP45N60DM6 STP45N60DM6

STB45N65M5, STF45N65M5, STP45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTAB2 Order codes VDSS @ TJmax RDS(on) max ID31STB45N65M532D2PAK1STF45N65M5 710 V 0.078 35 ATO-220FPSTP45N65M5TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa

 7.2. Size:1336K  st
 stb45n65m5 stf45n65m5 stp45n65m5 stw45n65m5.pdf

STP45N60DM6 STP45N60DM6

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeatures TAB2VDSS @ RDS(on) 3Order code ID1TJmax max32D2PAK1STB45N65M5TO-220FPTABSTF45N65M5710 V

 7.3. Size:288K  inchange semiconductor
 stp45n65m5.pdf

STP45N60DM6 STP45N60DM6

isc N-Channel MOSFET Transistor STP45N65M5FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 78m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STP5N80

 

 
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