STW35N60DM2 Datasheet and Replacement
Type Designator: STW35N60DM2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO247
STW35N60DM2 substitution
STW35N60DM2 Datasheet (PDF)
stw35n60dm2.pdf

STW35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code VDS ID PTOT max. STW35N60DM2 600 V 0.110 28 A 210 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extremely
stw35n65dm2.pdf

STW35N65DM2DatasheetN-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW35N65DM2 650 V 110 m 32 A Fast-recovery body diode3 Extremely low gate charge and input capacitance21 Low on-resistance 100% avalanche testedTO-247 Extremely high dv/dt ruggedness Zener-protectedD(2, TAB
stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V
Datasheet: STU5N95K5 , STU6N60DM2 , STW20N90K5 , STW20N95DK5 , STW25N60M2-EP , STW26N60M2 , STW28N60DM2 , STW33N60DM2 , AO4468 , STW35N65DM2 , STW36N60M6 , STW37N60DM2AG , STW40N90K5 , STW43N60DM2 , STW45N60DM2AG , STW45N60DM6 , STW48N60DM2 .
Keywords - STW35N60DM2 MOSFET datasheet
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History: KP775B | ME95N10F



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