STW35N65DM2 Specs and Replacement
Type Designator: STW35N65DM2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO247
STW35N65DM2 substitution
- MOSFET ⓘ Cross-Reference Search
STW35N65DM2 datasheet
stw35n65dm2.pdf
STW35N65DM2 Datasheet N-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package Features VDS RDS(on) max. ID Order code STW35N65DM2 650 V 110 m 32 A Fast-recovery body diode 3 Extremely low gate charge and input capacitance 2 1 Low on-resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB... See More ⇒
stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf
STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB35N65M5 710 V ... See More ⇒
stw35n60dm2.pdf
STW35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STW35N60DM2 600 V 0.110 28 A 210 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extremely... See More ⇒
Detailed specifications: STU6N60DM2, STW20N90K5, STW20N95DK5, STW25N60M2-EP, STW26N60M2, STW28N60DM2, STW33N60DM2, STW35N60DM2, IRFP064N, STW36N60M6, STW37N60DM2AG, STW40N90K5, STW43N60DM2, STW45N60DM2AG, STW45N60DM6, STW48N60DM2, STW48N60M6
Keywords - STW35N65DM2 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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