STW35N65DM2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW35N65DM2
Marking Code: 35N65DM2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56.3 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO247
STW35N65DM2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW35N65DM2 Datasheet (PDF)
stw35n65dm2.pdf
STW35N65DM2DatasheetN-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW35N65DM2 650 V 110 m 32 A Fast-recovery body diode3 Extremely low gate charge and input capacitance21 Low on-resistance 100% avalanche testedTO-247 Extremely high dv/dt ruggedness Zener-protectedD(2, TAB
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STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V
stw35n60dm2.pdf
STW35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code VDS ID PTOT max. STW35N60DM2 600 V 0.110 28 A 210 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extremely
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
