STW37N60DM2AG Specs and Replacement

Type Designator: STW37N60DM2AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO247

STW37N60DM2AG substitution

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STW37N60DM2AG datasheet

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STW37N60DM2AG

STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1 capac... See More ⇒

Detailed specifications: STW20N95DK5, STW25N60M2-EP, STW26N60M2, STW28N60DM2, STW33N60DM2, STW35N60DM2, STW35N65DM2, STW36N60M6, IRF730, STW40N90K5, STW43N60DM2, STW45N60DM2AG, STW45N60DM6, STW48N60DM2, STW48N60M6, STW48N60M6-4, STW50N65DM2AG

Keywords - STW37N60DM2AG MOSFET specs

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