All MOSFET. STW37N60DM2AG Datasheet

 

STW37N60DM2AG Datasheet and Replacement


   Type Designator: STW37N60DM2AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO247
 

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STW37N60DM2AG Datasheet (PDF)

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STW37N60DM2AG

STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capac

Datasheet: STW20N95DK5 , STW25N60M2-EP , STW26N60M2 , STW28N60DM2 , STW33N60DM2 , STW35N60DM2 , STW35N65DM2 , STW36N60M6 , BS170 , STW40N90K5 , STW43N60DM2 , STW45N60DM2AG , STW45N60DM6 , STW48N60DM2 , STW48N60M6 , STW48N60M6-4 , STW50N65DM2AG .

History: RFM4N40 | PSMN005-75P

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