All MOSFET. STW63N65DM2 Datasheet

 

STW63N65DM2 Datasheet and Replacement


   Type Designator: STW63N65DM2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.5 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO247
 

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STW63N65DM2 Datasheet (PDF)

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STW63N65DM2

STW63N65DM2 N-channel 650 V, 0.042 typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW63N65DM2 650 V 0.05 60 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extreme

Datasheet: STW43N60DM2 , STW45N60DM2AG , STW45N60DM6 , STW48N60DM2 , STW48N60M6 , STW48N60M6-4 , STW50N65DM2AG , STW56N65DM2 , IRFZ44 , STW65N65DM2AG , STW65N80K5 , STW70N60DM2 , STW70N60DM6-4 , STW70N65M2 , STW74NF30 , STW75N60M6 , STW8N120K5 .

History: 2SK2795 | APM2605C | MCH3478 | PJL9801 | ZVN0540ASTOB | 2SK3030 | 4N65H

Keywords - STW63N65DM2 MOSFET datasheet

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