STW63N65DM2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW63N65DM2
Marking Code: 63N65DM2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 446 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 13.5 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO247
STW63N65DM2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW63N65DM2 Datasheet (PDF)
..1. Size:706K st
stw63n65dm2.pdf
stw63n65dm2.pdf
STW63N65DM2 N-channel 650 V, 0.042 typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW63N65DM2 650 V 0.05 60 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extreme
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