STW63N65DM2 PDF and Equivalents Search

 

STW63N65DM2 Specs and Replacement

Type Designator: STW63N65DM2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 446 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.5 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO247

STW63N65DM2 substitution

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STW63N65DM2 datasheet

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 stw63n65dm2.pdf pdf_icon

STW63N65DM2

STW63N65DM2 N-channel 650 V, 0.042 typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW63N65DM2 650 V 0.05 60 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extreme... See More ⇒

Detailed specifications: STW43N60DM2, STW45N60DM2AG, STW45N60DM6, STW48N60DM2, STW48N60M6, STW48N60M6-4, STW50N65DM2AG, STW56N65DM2, IRFZ44, STW65N65DM2AG, STW65N80K5, STW70N60DM2, STW70N60DM6-4, STW70N65M2, STW74NF30, STW75N60M6, STW8N120K5

Keywords - STW63N65DM2 MOSFET specs

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