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STW65N65DM2AG Spec and Replacement


   Type Designator: STW65N65DM2AG
   Marking Code: 65N65DM2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 120 nC
   tr ⓘ - Rise Time: 13.5 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO247

 STW65N65DM2AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW65N65DM2AG Specs

 ..1. Size:389K  st
 stw65n65dm2ag.pdf pdf_icon

STW65N65DM2AG

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3 AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu... See More ⇒

 8.1. Size:707K  st
 stw65n80k5.pdf pdf_icon

STW65N65DM2AG

STW65N80K5 N-channel 800 V, 0.07 typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STW65N80K5 800 V 0.08 46 A 446 W Industry s lowest R x area DS(on) Industry s best figure of merit (FoM) 3 Ultra low gate charge 2 100% avalanche tested 1 Zener-protected ... See More ⇒

Detailed specifications: STW45N60DM2AG , STW45N60DM6 , STW48N60DM2 , STW48N60M6 , STW48N60M6-4 , STW50N65DM2AG , STW56N65DM2 , STW63N65DM2 , IRF640 , STW65N80K5 , STW70N60DM2 , STW70N60DM6-4 , STW70N65M2 , STW74NF30 , STW75N60M6 , STW8N120K5 , STW9N80K5 .

History: TK8A45DA | IXFX66N50Q2 | IRFF024 | JBL111P | IRF636A

Keywords - STW65N65DM2AG MOSFET specs

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