STW65N65DM2AG Specs and Replacement

Type Designator: STW65N65DM2AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 446 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.5 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO247

STW65N65DM2AG substitution

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STW65N65DM2AG datasheet

 ..1. Size:389K  st
 stw65n65dm2ag.pdf pdf_icon

STW65N65DM2AG

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3 AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu... See More ⇒

 8.1. Size:707K  st
 stw65n80k5.pdf pdf_icon

STW65N65DM2AG

STW65N80K5 N-channel 800 V, 0.07 typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STW65N80K5 800 V 0.08 46 A 446 W Industry s lowest R x area DS(on) Industry s best figure of merit (FoM) 3 Ultra low gate charge 2 100% avalanche tested 1 Zener-protected ... See More ⇒

Detailed specifications: STW45N60DM2AG, STW45N60DM6, STW48N60DM2, STW48N60M6, STW48N60M6-4, STW50N65DM2AG, STW56N65DM2, STW63N65DM2, IRF640, STW65N80K5, STW70N60DM2, STW70N60DM6-4, STW70N65M2, STW74NF30, STW75N60M6, STW8N120K5, STW9N80K5

Keywords - STW65N65DM2AG MOSFET specs

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