STW65N65DM2AG MOSFET. Datasheet pdf. Equivalent
Type Designator: STW65N65DM2AG
Marking Code: 65N65DM2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 446 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 13.5 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO247
STW65N65DM2AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW65N65DM2AG Datasheet (PDF)
stw65n65dm2ag.pdf
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